on-state current 4 amp ft04...h logic level triac this series of triac s uses a high performance pnpn technology. these par ts are intended for general purpose ac switching applications with highly inductive loads. dec - 02 absolute maximum ratings, according to iec publication no. 134 to220-ab gate trigger current 5 ma to 10 ma off-state voltage 200 v ?600 v mt1 mt2 g mt2 rms on-state current non-repetitive on-state current non-repetitive on-state current fusing current peak gate current average gate power dissipation critical rate of rise of on-state current operating temperature storage temperature i t(rms) parameter conditions min. max. unit symbol i tsm i 2 t i gm p g(av) t j t stg all conduction angle, t c = 110 ? full cycle, 60 hz full cycle, 50 hz t p = 10 ms, half cycle 20 ? max. t j =125? t j =125? i g = 2x i gt , t r 100ns f= 120 hz, t j =125? 50 -40 -40 a a a a 2 s a w a/? ? ? 4 33 30 4.5 4 1 +125 +150 di/dt i tsm repetitive peak off state voltage parameter voltage unit symbol v drm v rrm b 200 v m 600 d 400
ft04...h logic level triac dec - 02 electrical characteristics gate trigger current off-state leakage current threshold voltage dynamic resistance on-state voltage gate trigger voltage gate non trigger voltage holding current latching current critical rate of voltage rise parameter conditions sensitivity unit symbol i gt (1) i drm v d = 12 v dc , r l = 33 w , t j = 25 ? ma 1 5 0.9 120 1.6 1.3 0.2 2.6 60 ma ma ? v m w v v v ma ma v/? a/ms max max max max max max max max min max max max min min min min /i rrm v tm (2) v gt v gd i h (2) i l dv / dt (2) r th(j-a) thermal resistance junction-ambient v d = v drm , t j = 25 ? v r = v rrm , i t = 5.5 amp, tp = 380 ?, t j = 25 ? v d = 12 v dc , r l = 33 w , t j = 25 ? i t = 100 ma , gate open, t j = 25 ? i g = 1.2 i gt , t j = 25 ? v d = 0.67 x v drm , gate open t j = 125 ? quadrant q1?3 q4 q1?4 (3) q1?4 (3) q1,q3,q4 (4) q2 v d = v drm , r l = 3.3k w , t j = 125 ? ?/w ?/w 09 10 10 15 25 30 40 2.7 2.0 - (1) minimum i gt is guaranted at 5% of i gt max. (2) for either polarity of electrode mt2 voltage with reference to electrode mt1. r th(j-c) thermal resistance junction-case (di/dt)c (2) critical rate of current rise (dv/dt)c= 0.1 v/? t j = 125 ? (dv/dt)c= 10 v/? t j = 125 ? without snubber tj = 125 ? v to (2) r d (2) t j = 125 ? t j = 125 ? part number information fagor triac current case voltage sensitivity f t 04 08 b h 00 forming tu packaging 05 5 5 15 10 20 10 1.5 - - t j = 125 ? 07 5 7 08 10 10 10 15 20 1.8 0.9 - 20 20 40 20 2.5 - - 04 5 15 10 20 10 1.5 - - (3) q4 for 4 quadrant triacs q3 for 3 quadrant triacs (4) only for 4 quadrant triacs
1 10 100 1000 30 25 20 15 10 5 0 i tsm (a) number of cycles 1e+0 1e-1 1e-2 k=[zth / rth] 1e-3 1e-2 1e-1 1e+0 1e+1 1e+2 5e+2 tp (s) i t(rms) (a) dec - 02 fig. 1: maximum power dissipation versus rms on-state curren (full cycle). 0 25 50 75 100 125 fig. 2: rms on-state current versus case temperature (full cycle). fig. 3: : relative variation of thermal impedance versus pulse duration. fig. 5: surge peak on-state current versus number of cycles fig. 6: non-repetitive surge peak on-state current for a sinusoidal pulse with width tp<10ms, and corresponding value of i 2 t. fig. 4: on-state characteristics (maximum values) ft04...h logic level triac p (w) tc ( c) i t(rms) (a) 0 2 4 0 1 2 3 4 5 0 1.5 2.5 3.5 4.0 4.5 100 10 1 i tm (a) 0.5 1.0 1.5 2.0 2.5 3.0 5.0 v tm (v) zth(j-c) zth(j-a) 3.5 4.0 4.5 tj max vto = 0.85 v rt = 35m w 0.01 0.10 1.00 10.00 100 i tsm (a), i 2 t (a 2 s) tp (ms) non repetitive tj initial = 25 c repetitive tc = 90 c dl/dt limitation 50a/ s 1 3 0.5 1.0 2.0 3.0 tj max tj = 25 c t=20ms one cycle i 2 t i tsm 10 1 tj initial = 25 c
ft04...h logic level triac package mechanical data to-220ab (plastic) a a1 a2 b b1 b2 c c1 c2 e f i i4 l i2 i3 m ref. dimensions milimeters min. nominal max. 15.20 13.00 10.00 0.61 1.23 4.40 0.49 2.40 2.40 6.20 3.75 15.80 2.65 1.14 1.14 3.75 16.40 2.60 15.90 14.00 10.40 0.88 1.32 4.60 0.70 2.72 2.70 6.60 3.85 16.80 2.95 1.70 1.70 14 a1 l a e a2 b1 12 13 ? b c f b2 c2 c1 m 0 0.5 2.0 1.0 1.5 2.5 i gt, i h, i l [tj]/i gt, i h, i l .[tj=25 c] fig. 7: relative variation of gate trigger current, holding current and latching versus junction temperature (typical values) tj( c) -40 -20 0 20 40 60 80 100120140 i gt i h &i l dec - 02 0 25 50 75 fig. 8: relative variation of critical rate of decrease of main current versus junction temperature (di/dt) c [tj]/(di/dc) c [tj specified] 100 6 5 4 3 2 1 0 tj( c) 125
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